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April 2002
FDC6392S
20V Integrated P-Channel PowerTrench ? MOSFET and Schottky Diode
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
MOSFET:
? –2.2 A, –20V. R DS(ON) = 150 m ? @ V GS = –4.5V
R DS(ON) = 200 m ? @ V GS = –2.5V
? Low Gate Charge (3.7nC typ)
? Compact industry standard SuperSOT ? -6 package
Schottky:
? VF < 0.45 V @ 1 A
S1
D2
D1
1
6
SuperSOT TM -6
S2
G1
Pin 1
SuperSOT?-6
G2
2
3
5
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Ratings
–20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2.2
A
– Pulsed
–6
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
V RRM
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
–55 to +150
20
° C
V
I O
Schottky Average Forward Current
(Note 1a)
1
A
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
Package Marking and Ordering Information
Device Marking
.392
Device
FDC6392S
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
FDC6392S Rev C(W)
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相关代理商/技术参数
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